ohmic resistance
英
美
欧姆律电阻
英英释义
noun
- a material's opposition to the flow of electric current
双语例句
- To study the PEMFC's ohmic internal resistance can predict the membrane's dryness. To control the operating temperature and the cathode humidity can reduce PEMFC's ohmic loss and improve PEMFC's efficiency.
合理控制工作温度、空气湿度等参数,可以减少欧姆极化损失,提高PEMFC的工作效率。 - Howevers, there are significant barriers to intermediate temperature SOFC: electrolyte ohmic resistance and electrode overpotential, especially cathode overpotential.
但随着工作温度的降低,电解质欧姆电阻和电极极化电阻增大,而阴极的极化电阻增大尤为明显。 - If there is a large contact resistance between the electrode and the semiconductor film, the performance of devices would be significantly decreased due to heat or poor contact. Therefore, ohmic contact with low resistance and thermal stability is very critical.
如果接触电极和半导体之间存在较大的接触电阻,那么器件的性能就会由于散热或者接触不良而显著下降,因此获得低电阻、热稳定的欧姆接触非常关键。 - The back ohmic contact resistance of Al-BSF by DC magnetron sputtering is downtrend with the annealing temperature increasing, and less than that by the screen printing process.
溅射工艺制备出的铝背场接触电阻随退火温度升高呈下降趋势且溅射工艺的接触电阻比印刷工艺更小。 - The Research of Low Ohmic Contact Resistance to p-GaN
低p-GaN欧姆接触电阻的研究 - In order to make the application in the device better, the ohmic contact with low resistance between the electrode and p-type and n-type ZnO films needs to be studied and prepared.
为了更好的实现其在器件方面的应用,需研究制备出适合于p型和n型ZnO薄膜的低阻欧姆接触电极。 - Influence of the ohmic contact technologies of a solar cell on its shunt resistance
太阳电池电极工艺对其并联电阻和影响 - The ohmic base resistance of bipolar transistor introduced in EM_2 Model is a very important parameter.
在双极型晶体管EM2模型参数中引入的基极电阻r'b是重要的也是较难测量的参数之一。 - Various methods to reduce the heat effect of Ni/ MH battery were summarized, such as decreasing ohmic resistance and charge polarization, increasing O_2 evolving over-potential, reducing O_2 recombination, heat dissipation and charge monitoring.
总结了各种降低MH/Ni电池热效应的方法,包括降低电池欧姆电阻、减小充电极化、提高氧气析出过电位、减少氧气复合以及散热和充电控制等。 - To do this, By use of the experiments, the optimum technological conditions are obtained. The ohmic contact resistance has been lowered to below 0.06 Ω.
为此,在进行了大量的实验后,找到了降低欧姆接触电阻的最佳工艺条件,获得了小于0.06Ω的最低电阻。